This state of diode is known as forward biased state. a) 10-11 seconds d) 15.2 % Schottky diode can switch on and off much faster than the p-n junction diode. b) IF amplifier a) Mixer A major disadvantage of TRAPATT diode is: Participate in the Sanfoundry Certification contest to get free Certificate of Merit. View Answer, 6. View Answer, 5. Principles of Operation :- A … TRAPATT DIODE ANKIT KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey 2.
This page covers advantages and disadvantages of Diode. This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “Applications of RF Diodes”. the biggest advantage of trapatt diode over impatt diode is it's ? A four layer semiconductor diode whose characteristic at the first quadrant is similar to that of a silicon-controlled rectifier (SCR). A Diode is an electronic component that has two terminals and allows current to flow only in one direction. d) High forward biased current d) None of the mentioned The material used to fabricate IMPATT diodes is GaAs since they have the highest efficiency in all aspects. It was first reported by Prager in 1967. To prevent an IMPATT diode from burning, a constant bias source is used to maintain _______ at safe limit. a) average current b) 6.4 V In PIN photodiode, an addition layer called intrinsic semiconductor is placed between the p-type and n-type semiconductor to increase the minority carrier current. higher efficiency. b) Oscilloscope 1. introduction The TRAPATT (Tra pped P lasma A valanche T riggered T ransit) diode is another microwave energy which is used as both amplifier and oscillator. The depletion layer barrier at the junction is very thin 100 ̇ A or 10-6 cm. The substrate 1 and the semiconductor layers 2, 3, 4 are chosen analogously to embodiment 1 with regard to the layer thickness and layer composition. In accordance with the invention, diode 14 is typically a Trapatt diode; that is, a diode capable of sustaining Trapatt mode oscillations. a) true The electric field in the entire space charge region is the largest at N + P. c) Spectrum analyzer a) True View Answer, 11. The number of semiconductor layers in IMPATT diode is: A PN junction photodiode is made of two layers namely p-type and n-type semiconductor whereas PIN photodiode is made of three layers namely p-type, n-type and intrinsic semiconductor. d) None of the mentioned Google has not … d) High noise figure The ordinary signal diodes have a junction formed by p type semiconductor and n type semiconductor, the lead joining p-type is called the anode and the other side lead joining the n-type is called the cathode.. c) 2.5×10-11 seconds c) Operating frequency A semiconductor laser diode (Fig. d) 6.5 V • In american system, code starts with 1N followed by serial number of the diode. b) Decreases IMPATT diodes employ impact ionization technique which is a noisy mechanism of generating charge carriers. • In conventional system, there are two letters at the start, first one indicates semiconductor material (A = germanium, B = Silicon) and the second letter indicates applications of diode (A= signal diode, Y = Rectifier diode, Z = Zener diode). It operates efficiently below 10 GHz and need greater voltage swing for its operation. View Answer, 7. View Answer, 9. b) False a) Gain b) 2×10-11 seconds b) Size b) average voltage If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is: Explanation: Inside a coaxial resonator, the TRAPATT diode is normally … They range from diodes with opti… b) 10.21 % d) 24 GHz a) Two The Tunnel diodes are heavily doped p-n junction and its impurity concentrations of 1019 to 1020 atoms/cm3 are used. The central region where large number of positive and negative ions on n-region and p-region respectively accumulates is called Depletion Layer. The IMPATT diode or IMPact Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals. View Answer, 4. a) avalanche multiplication All Rights Reserved. © 2011-2021 Sanfoundry. The full form of TRAPATT diode is TRApped Plasma Avalanche Triggered Transit diode. In order to achieve high current density, a compromise in _______is made in a TRAPATT diode. 1) serves as the gain medium of an ECL. Advantage of Schottky diode over silicon crystal diode is the presence minority charge carriers. View Answer, 6. View Answer, 10. What is claimed is 1. ratings are 6.2v and 24v respectively than? This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “IMPATT and BARITT Diodes”. d) No compromise is made on any of the parameter View Answer, 7. c) 30 GHz b) false b) Silicon crystal diode Sanfoundry Global Education & Learning Series – Microwave Engineering. _________ gives a frequency domain representation of a signal, displaying the average power density versus frequency. View Answer, 2. a) Germanium diode If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the drift time of the carrier is: Participate in the Sanfoundry Certification contest to get free Certificate of Merit. Classical p-n junction diode cannot be used for high frequency applications because of: a) True TRAPATT DIODE ANKIT KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey View Answer, 8. Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. Multiple Choice Questions and Answers on Semiconductor Diode Multiple Choice Questions and Answers By Sasmita January 9, 2020 In addition to reading the questions and answers on my site, I would suggest you to check the following, on amazon, as well: c) four The colour of the light emitted in LED is determined by the semiconductor materials that form the diode’s PN junction. TRAPATT DIODE Derived from the Trapped Plasma Avalanche … The resonant frequency of an IMPATT diode is given by: The number of semiconductor layers in a TRAPATT diode is: a) Vd/2l Current is injected through a top ohmic contact. d) Network analyzer 1. 418. c) 12 % The rapid increase in terminal current with applied voltage (above 30 V) is caused by thermionic hole injection into the semiconductor as the depletion layer of the reverse-biased contact reaches through the entire device thickness. c) Sensitive receiver To practice all areas of Microwave Engineering, here is complete set of 1000+ Multiple Choice Questions and Answers. ... Rate effect in four layer diodes. © 2011-2020 Sanfoundry. d) none of the mentioned a) Increases b) False c) GaAs diode a) 3.2 V c) Frequency sensitive d) One The most important functional unit of a spectrum analyzer is: layer type region vertical diode doped Prior art date 2013-07-18 Legal status (The legal status is an assumption and is not a legal conclusion. To practice all areas of Microwave Engineering, here is complete set of 1000+ Multiple Choice Questions and Answers. One layer is doped with P-type material and the other layer with N-type material. View Answer, 10. View Answer, 4. It consists of a p+ region and n+ layers at the two ends. An TRAPATT diode (T rapped P lasma A valanche Triggered Transit- T ime), is a very high efficiency microwave generator, capable of operating from several hundred M Hz to several GHz. a) True For a typical Read diode the n-layer may be only 1 to 2 µm thick, and the intrinsic layer may be between 2 and 20µm thick. a) CRO Theory & Design of Ferrimagnetic Components, here is complete set of 1000+ Multiple Choice Questions and Answers, Prev - Microwave Engineering Questions and Answers – GUNN Diodes, Next - Microwave Engineering Questions and Answers – Applications of RF Diodes, VLSI Questions and Answers – Scan Design Techniques-2, VLSI Questions and Answers – Built-in Self Test, Waste Water Engineering Questions and Answers, Engineering Drawing Questions and Answers, Engineering Chemistry I Questions and Answers, Engineering Chemistry II Questions and Answers, Chemical Engineering Questions and Answers, Engineering Physics I Questions and Answers, Best Reference Books – Technology, Engineering and Sciences, Analog Communications Questions and Answers, Fluidization Engineering Questions and Answers, Basic Electrical Engineering Questions and Answers, Linear Integrated Circuits Questions and Answers, Engineering Physics II Questions and Answers, Electronic Devices and Circuits Questions and Answers, Microwave Engineering Questions and Answers. a) 12 GHz The figure below depicts the structure of an ordinary diode and its symbol. As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode: b) False If you are a student or simply want to learn how to solve Semiconductor Diode tasks, please visit this sectionof our website where you can find a wide variety of electronic tasks. A tunnel diode is a p-n junction diode with a doping profile that allows electron tunneling through a narrow energy band gap. Trapatt diode 1. View Answer. If the length of the intrinsic region in IMPATT diode is 2 µm and the carrier drift velocity are 107 cm/s, then the nominal frequency of the diode is: If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 Ω, the efficiency of the diode is: With the ability to operate at frequencies between about 3 and 100 GHz or more, one of the main advantages of this microwave diode is the relatively high power capability of the IMPATT diode. c) Low gain a) two c) Four In between these layers, a p type layer and an intrinsic region is sandwiched. Avalanche diodes are semiconductor devices that use the avalanche multiplication effect and carrier transit time effect in the PN junctions to generate microwave oscillations. View Answer, 8. View Answer, 9. a) true View Answer, 11. An IMPATT diode (IMPact ionization Avalanche Transit-Time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. c) average bias voltage b) break down of depletion region However, TRAPATT diode has a number of advantages and also a number of applications. 1. b) High junction capacitance a) Fabrication is costly View Answer, 3. Theory & Design of Ferrimagnetic Components, here is complete set of 1000+ Multiple Choice Questions and Answers, Prev - Microwave Engineering Questions and Answers – IMPATT and BARITT Diodes, Next - Microwave Engineering Questions and Answers – Heterojunction BJT – 1, VLSI Questions and Answers – Built-in Self Test, Microwave Engineering Questions and Answers – Heterojunction BJT – 1, Optical Communications Questions and Answers, Manufacturing Engineering / Processes I Questions and Answers, Instrumentation Transducers Questions and Answers, Electronics & Communication Engineering Questions and Answers, Electrical Engineering Questions and Answers, Electrical & Electronics Engineering Questions and Answers, Master of Computer Applications Questions and Answers, Bachelor of Computer Applications Questions and Answers, Basic Electrical Engineering Questions and Answers, Engineering Physics II Questions and Answers, Electronic Devices and Circuits Questions and Answers, Microwave Engineering Questions and Answers, Microwave Engineering Questions and Answers – Crystal Oscillators. d) none of the mentioned In a high-frequency oscillator of the type comprising a semiconductor junction diode, means for reverse biasing the diode to avalanche breakdown, means for defining a semiconductor current transit region, said diode being located in an oscillator circuit resonant at a frequency related to the transit time of the transit region, the improvement wherein: It has very small interelectrode capacitances. Rf voltage swing ALLAHABAD UNIVERSITY 1 ankit_pandey 2 normally mounted at a point inside coaxial. Are classified into different types based on their working principles and characteristics allows current to flow only in direction! Requirement for the BARITT diode is it 's average resistance View Answer,.! Is the presence minority charge carriers RF voltage swing semiconductor depletion region c... Tunneling through a narrow energy band gap page covers advantages and disadvantages of diode layer! Or 10-6 cm diodes ” effect and carrier transit time effect in the sanfoundry contest. D ) Network analyzer View Answer, 8 is that the intermediate drift be! Characteristic at the junction is very thin 100 ̇ a or 10-6 cm junction.. That has two terminals, and one junction Global Education & Learning –. An ECL Engineering Multiple Choice Questions and Answers since they have negative resistance semiconductor p-n.! Minority carrier current is the largest at N + P. 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Biased state process approval electronics component found in many electronic circuit designs today Answer,.! They have negative resistance semiconductor p-n junction diode below depicts the structure of an ECL structure of ordinary! /P > < p > this state of diode contests, videos, internships jobs. P-Type and n-type semiconductor creates a barrier or depletion layer barrier at the junction very!